2N2222A NPN Bipolar Transistor (Pack of 5)

SKU: TDF7-003

• Advanced process technology

• Low error voltage

• Fast switching speed

• Full-voltage operation

• High power and current handling capability

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Description

About 2N2222A Transistor 

2N2222A is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

Features:-

  • Advanced process technology
  •  Low error voltage
  • Fast switching speed
  • Full-voltage operation
  • High power and current handling capability

Detailed Specifications:-

Transistor Polarity NPN
Collector-Base Voltage (VCBO) 75V
Collector-Emitter Voltage (VCEO) 40V
Emitter-Base Voltage (VEBO) 6V
Continuous Collector Current (IC) 0.6A
Collector-Base Capacitance (CCBO) 8pF
Transition Frequency (fT) 300MHz
DC Current Gain (hFE) 300
Operating Temperature Range -65 – 175°C
Power Dissipation (PD) 1.8W

Description

About 2N2222A Transistor 

2N2222A is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

Features:-

  • Advanced process technology
  •  Low error voltage
  • Fast switching speed
  • Full-voltage operation
  • High power and current handling capability

Detailed Specifications:-

Transistor Polarity NPN
Collector-Base Voltage (VCBO) 75V
Collector-Emitter Voltage (VCEO) 40V
Emitter-Base Voltage (VEBO) 6V
Continuous Collector Current (IC) 0.6A
Collector-Base Capacitance (CCBO) 8pF
Transition Frequency (fT) 300MHz
DC Current Gain (hFE) 300
Operating Temperature Range -65 – 175°C
Power Dissipation (PD) 1.8W

Specification

Overview

Weight 0.01 kg
HSN Code

85412900

Processor

Weight 0.01 kg
HSN Code

85412900

Display

Weight 0.01 kg
HSN Code

85412900

RAM

Weight 0.01 kg
HSN Code

85412900

Storage

Weight 0.01 kg
HSN Code

85412900

Video Card

Weight 0.01 kg
HSN Code

85412900

Connectivity

Weight 0.01 kg
HSN Code

85412900

Features

Weight 0.01 kg
HSN Code

85412900

Battery

Weight 0.01 kg
HSN Code

85412900

General

Weight 0.01 kg
HSN Code

85412900

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